Method of reducing noise disturbing a signal in an...

Details Method of reducing noise disturbing a signal in an... Method of reducing noise disturbing a signal in an...

2008-04-22

2008-04-22

Graybill, David E (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S210000, C438S217000, C438S218000, C438S238000, C438S239000, C438S381000, C438S382000, C438S294000, C438S305000, C438S451000, C438S510000, C438S914000, C257SE21544, C257SE21642, C257SE21644, C257SE27062

Reexamination Certificate

active

07361540

ABSTRACT:
Certain aspects of a method for reducing noise disturbing at least one signal in an electronic device may comprise shielding a first layer doped with a first dopant from a signaling layer employing a second layer doped with a second dopant. A first signaling component of the signaling layer may be coupled to the second layer and a second signaling component of the signaling layer may be coupled to the second layer. The second layer may be coupled to the first layer, and this reduces the signal disturbing noise in the electronic device. Shielding the first layer from the signaling layer may comprise disposing the second layer between the first layer and the signaling layer. Shielding the first layer from the signaling layer may comprise disposing a deep N-well between the first layer and the signaling layer.

REFERENCES:
patent: 5581103 (1996-12-01), Mizukami et al.
patent: 5994741 (1999-11-01), Koizumi et al.
patent: 6212671 (2001-04-01), Kanehira et al.
patent: 6356497 (2002-03-01), Puar et al.
patent: 2002-84514 (2002-11-01), None
Korean Office Action issued on Oct. 31, 2005 for KR 2004-1815.

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