Semiconductor device with a metal line and method of forming...

Details Semiconductor device with a metal line and method of forming... Semiconductor device with a metal line and method of forming...

2008-05-13

2008-05-13

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C257S758000, C257S760000

Reexamination Certificate

active

07371678

ABSTRACT:
A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.

REFERENCES:
patent: 6693319 (2004-02-01), Durcan et al.
patent: 2001/0004552 (2001-06-01), Tang et al.
patent: 2002/0048944 (2002-04-01), Tang et al.
patent: 2004/0018714 (2004-01-01), Cooney et al.

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