Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-07-29

2008-07-29

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S981000, C257SE21639

Reexamination Certificate

active

07405118

ABSTRACT:
The present invention provides a semiconductor device fabrication method including the steps of: forming first gate insulating films in first to third active regions of a silicon substrate; wet-etching the first gate insulating film of the second active region through a first resist opening portion of a first resist pattern; forming a second gate insulating film in the second active region; forming on the silicon substrate a second resist pattern having a second resist portion larger than the first resist opening portion; wet-etching the first gate insulating film of the third active region through a second resist opening portion of the second resist pattern; and forming a third gate insulating film in the third active region.

REFERENCES:
patent: 6165825 (2000-12-01), Odake
patent: 6403425 (2002-06-01), Ang et al.
patent: 6831020 (2004-12-01), Yamada et al.
patent: 2003-203988 (2003-07-01), None

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