Substrate of gallium nitride single crystal and process for...

Details Substrate of gallium nitride single crystal and process for... Substrate of gallium nitride single crystal and process for...

2008-07-15

2008-07-15

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21108

Reexamination Certificate

active

07399687

ABSTRACT:
The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

REFERENCES:
patent: 6562701 (2003-05-01), Ishida et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 6927149 (2005-08-01), Sugahara et al.
patent: 2002/0137342 (2002-09-01), Ishida et al.
patent: 2003/0119239 (2003-06-01), Koike et al.
patent: 2003/0143771 (2003-07-01), Kidoguchi et al.
patent: 1 184 897 (2002-03-01), None
patent: 63-188983 (1988-08-01), None
patent: 2000-129000 (2000-05-01), None
patent: 2001-168042 (2001-06-01), None
patent: 2001-257166 (2001-09-01), None
patent: 2001345281 (2001-12-01), None
patent: 2002-9004 (2002-01-01), None
patent: 2002-164292 (2002-06-01), None
patent: 2002-289541 (2002-10-01), None
patent: 2002-343728 (2002-11-01), None
patent: 2002-353152 (2002-12-01), None
Isao Akazaki, “Advanced Electronics I-21 III Zoku Chikkabutsu Handotai”, Dec. 8, 1999, 1stedition, pp. 205-208.
M. Seelmann-Eggebert et al., “Polarity of (00•1) GaN epilayers grown on a (00•1) sapphire”,Applied Physics Letters, vol. 71, No. 18, 1997, pp. 2635.
Michael K. Kelly et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”,Jpn. J. Appl. Phys., vol. 38, 1999, pp. L217-L219.

Affiliated with

Also associated with

Rating

Substrate of gallium nitride single crystal and process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate of gallium nitride single crystal and process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate of gallium nitride single crystal and process for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2748911