Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2011-03-01
2011-03-01
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S191000, C365S202000, C365S207000, C365S230060
Reexamination Certificate
active
07898881
ABSTRACT:
A semiconductor memory device includes first and second edge drivers configured to generate sensing control signals, a memory cell array between first and second edge drivers, and pluralities of unit sense amplifiers detecting data from the memory cell array in response to the sensing control signals.
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Choi Jung-Hwa
Moon Byung-sik
Lee & Morse P.C.
Nguyen Viet Q
Samsung Electronics Co,. Ltd.
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