Method of forming damascene filament wires

Details Method of forming damascene filament wires Method of forming damascene filament wires

2011-03-29

2011-03-29

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S720000, C438S638000, C438S296000, C438S246000, C438S691000, C438S619000, C438S629000

Reexamination Certificate

active

07915162

ABSTRACT:
A method of forming a semiconductor device. A first dielectric layer is deposited on and in direct mechanical contact with the substrate. A first hard mask is deposited on the first dielectric layer. A first and second trench is formed within the first dielectric layer and the first hard mask. The second trench is wider than the first trench. A first conformal liner is deposited over the first hard mask and within the first and second trenches, a portion of which is removed, leaving a remaining portion of the first conformal liner in direct physical contact with the substrate, the first dielectric layer, and the first hard mask, and not on the first hard mask. Copper is deposited over the first conformal liner to overfill fill the first and second trenches and is planarized to remove an excess thereof to form a planar surface of the copper.

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