Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-22
2008-04-22
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S296000, C257S775000
Reexamination Certificate
active
07361552
ABSTRACT:
A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.
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Ema Taiji
Hayashi, legal representative Tadaaki
Ohkawa Narumi
Fujitsu Limited
Kratz Quintos & Hanson, LLP
López-Esquerra Andrés
Vu David
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