Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-06-28
2011-06-28
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C438S437000, C257SE21546
Reexamination Certificate
active
07968422
ABSTRACT:
A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by growing a dielectric layer in at least one region on the substrate.
REFERENCES:
patent: 4152478 (1979-05-01), Takagi
patent: 4361762 (1982-11-01), Douglas
patent: 4740267 (1988-04-01), Knauer et al.
patent: 4886971 (1989-12-01), Matsumura et al.
patent: 4916311 (1990-04-01), Fuzishita et al.
patent: 6124620 (2000-09-01), Gardner et al.
patent: 6218207 (2001-04-01), Itoh et al.
patent: 6635883 (2003-10-01), Torti et al.
patent: 6797339 (2004-09-01), Akizuki et al.
patent: 7060989 (2006-06-01), Swenson et al.
patent: 7173252 (2007-02-01), Mack
patent: 2002/0014407 (2002-02-01), Allen et al.
patent: 2002/0130275 (2002-09-01), Mack et al.
patent: 2003/0132471 (2003-07-01), Matsui et al.
patent: 2005/0155951 (2005-07-01), Suzuki et al.
patent: 2006/0124934 (2006-06-01), Fukumiya et al.
patent: 2007/0099380 (2007-05-01), Kim
patent: 2007/0184655 (2007-08-01), Learn et al.
patent: 2007/0210366 (2007-09-01), Sandhu et al.
patent: 2007/0224824 (2007-09-01), Chen et al.
patent: 2008/0149826 (2008-06-01), Renau et al.
patent: 2009/0152629 (2009-06-01), Hu et al.
patent: 62296357 (1987-12-01), None
patent: 06275545 (1994-09-01), None
patent: 0170378 (2001-09-01), None
patent: 0184612 (2001-11-01), None
Isao Yamada et al., “Materials Processing by Gas Cluster Ion Beams”, Materials Science and Engineering Reports, vol. 34, Issue 6, pp. 231-295, Oct. 30, 2001 (ISSN 09S7-796X).
Saitoh, Y. et al, Acceleration of cluster and molecular ions by TIARA 3 MV tandem accelerator, vol. 452, No. 1-2, Sep. 21, 2000, pp. 61-66, XP004210610, ISSN: 0168-9002.
Yamada, I. et al., Surface modification with gas cluster ion beams, Nuclear Instruments & Methods in Physics Research, vol. B79, Nov. 2, 1992, pp. 223-226, XP001031961, ISSN: 0168-583X.
Park et al., Evolution of Residual Stress in Plasma-enhanced Chemical-Vapor-Deposited Silicon Dioxide Film Exposed to Room Air, Applied Physics Letters, Dec. 13, 1999, pp. 3811-3813, vol. 75, No. 24.
Nguyen, S. V., High-density Plasma Chemical Vapor Deposition of Silicon-based Dielectric Films for Integrated Circuits, J. Res. Develop., Jan./Mar. 1999, pp. 109-126, vol. 43, No. 1/2.
Witvrouw et al., A Comparison Between Wet HF Etching and Vapor HF Etching for Sacrificial Oxide Removal, SPIE vol. 4174 (2000), pp. 130-141.
Baker, S.H. et al., The construction of a gas aggregation source for the preparation of size-selected nanoscale transition metal clusters; Review of Scientific Instruments, AIP, Aug. 1, 2000, pp. 3178-3183, vol. 71, No. 8, XP012038462, ISSN: 0034-6748, Melville, NY.
European Patent Office, International Search Report and Written Opinion issued in related International Application PCT/US2010/020612 dated Apr. 20, 2010, 12 pp.
Toyoda, N. et al., High Quality Optical Thin Film Formation with Low Energy Gas Cluster Ion Beam Irradiation, 14th Int'l Conference on Ion Implantation Technology Proceedings, IEEE, 2003, pp. 701-704, Piscataway, NJ.
European Patent Office, Search Report and Written Opinion issued in corresponding International Application No. PCT/US2010/022061, dated Aug. 30, 2010, 12 pp.
Hautala, J., et al., “Infusion Processing: An Alternative to Plasma Technology for Semiconductor Device Manufacturing”, Proceedings of the Electrochemical Society, Symposium on ULSI Process Integration IV (Quebec PR, Canada, May 16-20, 2005), 2005, vol. 6, pp. 118-130.
Shao et al., “Nitrogen gas-cluster ion beam—A new nitrogen source for GaN growth”, Mat. Res. Soc. Symp. Proc., 2003, vol. 743, pp. 97-102.
U.S. Patent and Trademark Office, Non-final Office Action issued in related U.S. Appl. No. 12/145,199 dated Oct. 22, 2010, 25 pp.
U.S. Patent and Trademark Office, Non-final Office Action issued in related U.S. Appl. No. 12/145,199 dated Mar. 25, 2011, 16 pp.
TEL Epion Inc.
Trinh Michael
Wood Herron & Evans LLP
LandOfFree
Method for forming trench isolation using a gas cluster ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming trench isolation using a gas cluster ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming trench isolation using a gas cluster ion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2739965