Non-volatile memory device and method for fabricating the same

Details Non-volatile memory device and method for fabricating the same Non-volatile memory device and method for fabricating the same

2011-03-01

2011-03-01

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S266000, C438S287000, C438S283000, C257SE21625, C257SE21679, C257SE21687, C257SE21688, C257SE21639

Reexamination Certificate

active

07897456

ABSTRACT:
A non-volatile memory device includes a peripheral circuit region and a cell region. A method for fabricating the non-volatile memory device includes forming gate patterns over a substrate, the gate pattern including a tunnel insulation layer, a floating gate electrode, a charge blocking layer and a control gate electrode, and removing the control gate electrode and the charge blocking layer of the gate pattern formed in the peripheral circuit region.

REFERENCES:
patent: 2005/0073001 (2005-04-01), Kamigaichi et al.
patent: 2006/0076611 (2006-04-01), Matsui et al.
patent: 2007/0184606 (2007-08-01), You et al.
patent: 2008/0315281 (2008-12-01), Park
patent: 100389039 (2003-06-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Jan. 18, 2011.

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