Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-04-05
2011-04-05
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S096000, C438S094000, C438S097000, C438S073000, C438S057000, C438S458000, C257SE21002, C257SE21133, C257SE31045, C257SE31061, C257SE21566
Reexamination Certificate
active
07919398
ABSTRACT:
Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.
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Chae Yong Kee
Choi Soo Young
Sheng Shuran
Applied Materials Inc.
Patterson & Sheridan LLP
Richards N Drew
Singal Ankush k
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