Semiconductor device and method for semiconductor device

Details Semiconductor device and method for semiconductor device Semiconductor device and method for semiconductor device

2011-08-16

2011-08-16

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S207000, C438S211000, C438S218000, C438S197000, C257SE21632, C257SE21642, C257SE21645, C257SE21685, C257SE21687

Reexamination Certificate

active

07998811

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a memory cell region provided on the semiconductor substrate, a word line provided on the memory cell region, a first gate insulating film provided in the memory cell region beneath the word line, a first floating gate electrode provided on the first gate insulating film, a second gate insulating film provided in the memory cell region beneath the word line, the second gate insulating film being different from the first gate insulating film in thickness, and a second floating gate electrode provided on the second gate insulating film.

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Notice of Reasons for Rejection mailed Feb. 16, 2010 by Japanese Patent Office in Japanese counterpart application No. 2005-171306.
Notice of Reasons for Rejection mailed May 10, 2011, in JP 2005-171306.

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