Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

2011-04-12

2011-04-12

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S674000, C438S680000, C438S684000

Reexamination Certificate

active

07923322

ABSTRACT:
A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.

REFERENCES:
patent: 4497683 (1985-02-01), Celler et al.
patent: 4722912 (1988-02-01), Flatley et al.
patent: 4901128 (1990-02-01), Sunami et al.
patent: 4948755 (1990-08-01), Mo
patent: 4963506 (1990-10-01), Liaw et al.
patent: 4966868 (1990-10-01), Murali et al.
patent: 5006911 (1991-04-01), Sivan
patent: 5037775 (1991-08-01), Reisman
patent: 5080933 (1992-01-01), Grupen-Shemansky
patent: 5110757 (1992-05-01), Arst et al.
patent: 5118639 (1992-06-01), Roth et al.
patent: 5124276 (1992-06-01), Samata et al.
patent: 5227651 (1993-07-01), Kim et al.
patent: 5364815 (1994-11-01), Osada
patent: 5441012 (1995-08-01), Aketagawa et al.
patent: 5607878 (1997-03-01), Otsuka et al.
patent: 5646073 (1997-07-01), Grider et al.
patent: 5663098 (1997-09-01), Creighton et al.
patent: 5798278 (1998-08-01), Chan et al.
patent: 5811344 (1998-09-01), Tu et al.
patent: 5818100 (1998-10-01), Grider et al.
patent: 6013575 (2000-01-01), Itoh
patent: 6017823 (2000-01-01), Shishiguchi et al.
patent: 6069036 (2000-05-01), Kim
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6218288 (2001-04-01), Li et al.
patent: 6387716 (2002-05-01), Nuttall et al.
patent: 6417015 (2002-07-01), Nuttall et al.
patent: 6458699 (2002-10-01), Nuttall et al.
patent: 6509239 (2003-01-01), Nuttall et al.
patent: 6693042 (2004-02-01), Sedigh et al.
patent: 6780771 (2004-08-01), Jayatilaka et al.
patent: 6790737 (2004-09-01), Schneegans et al.
patent: 6797558 (2004-09-01), Nuttall et al.
patent: 6803318 (2004-10-01), Qiao et al.
patent: 6893974 (2005-05-01), Sedigh et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 7049231 (2006-05-01), Nuttall et al.
patent: 7108746 (2006-09-01), Zehavi et al.
patent: 7137546 (2006-11-01), Zehavi et al.
patent: 7157792 (2007-01-01), Yahatilaka et al.
patent: 2002/0048911 (2002-04-01), Nuttall et al.
patent: 2002/0170487 (2002-11-01), Zehavi et al.
patent: 2004/0224485 (2004-11-01), Nuttall et al.
patent: 2006/0211218 (2006-09-01), Boyle et al.
patent: 2007/0006799 (2007-01-01), Zehavi et al.
Violette, Katherine et al.,Low Temperature Selective Silicon Epitaxy by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition Using Sl2H6,H2and Cl2, 68 Appl. Phys. Lett. 66-68 (Jan. 1, 1996).
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 1: Processing Technology, pp. 183 (1990).
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 2: Process Integration, pp. 45 (1990).

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