Method for manufacturing wiring, thin film transistor, light...

Details Method for manufacturing wiring, thin film transistor, light... Method for manufacturing wiring, thin film transistor, light...

2011-04-05

2011-04-05

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S149000, C438S674000, C257SE21174, C257SE21295, C257SE21479

Reexamination Certificate

active

07919411

ABSTRACT:
As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.

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