Method for forming pattern using hard mask

Details Method for forming pattern using hard mask Method for forming pattern using hard mask

2011-01-11

2011-01-11

Deo, Duy-Vu N. (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S612000, C438S652000, C438S585000, C257SE21035, C257SE21314

Reexamination Certificate

active

07867911

ABSTRACT:
A method for forming a pattern in a semiconductor device includes forming an etch target layer, forming a hard mask over the etch target layer, the hard mask including a multiple-layer stack structure comprising a bottom layer, a transformed layer, and an upper layer, wherein the transformed layer is formed by transforming a surface of the bottom layer. The hard mask and the etch target layer are etched.

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