Reduced parasitic leakage in semiconductor devices

Details Reduced parasitic leakage in semiconductor devices Reduced parasitic leakage in semiconductor devices

1998-12-17

2000-12-19

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257305, 257 68, 257 71, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

061630454

ABSTRACT:
A trench capacitor having a diffusion region adjacent to the collar to increase the gate threshold voltage of the parasitic MOSFET. This enables the use of a thinner collar while still achieving a leakage that is acceptable. In one embodiment, the diffusion region is self-aligned.

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Nesbit et al.; A 0.6 micrometer 256Mb Trench DRAM Cell With Self-Aligned BuriEd STrap (BEST); IEEE, IEDM, pp. 627-630, 1993.

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