Nonvolatile memory devices and methods of fabricating the same

Details Nonvolatile memory devices and methods of fabricating the same Nonvolatile memory devices and methods of fabricating the same

Filed on

2011-01-18

Date issued

2011-01-18

Examiner

Pizarro, Marcos D (Department: 2814)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Type

Reexamination Certificate

Status

active

Patent number

07872299

Description

ABSTRACT:
Provided are nonvolatile memory devices and methods of fabricating the same which may prevent or reduce deterioration of device characteristics and deterioration of a breakdown voltage. The nonvolatile memory device may include a semiconductor substrate, a charge-trap insulation layer on the semiconductor substrate and having a first region and second regions having a lower density of charge-trap sites than the first region, and a gate electrode on the charge-trap insulation layer, wherein the first region is overlapped by the gate electrode and the second regions are outside of the first region.

REFERENCES:
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patent: 6555865 (2003-04-01), Lee et al.
patent: 7217972 (2007-05-01), Mori
patent: 2006/0205148 (2006-09-01), Deppe et al.
patent: 2004-349705 (2004-12-01), None
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patent: 10-2007-0028240 (2007-03-01), None
English Language Abstract of KR 1020060079372 dated Jul. 6, 2006.
Notice of Allowance dated February 25, 2008 in corresponding Korean Patent Application No. 10-2007-0048845.

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