Transistor in a wiring interlayer insulating film

Details Transistor in a wiring interlayer insulating film Transistor in a wiring interlayer insulating film

2011-04-26

2011-04-26

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000

Reexamination Certificate

active

07932142

ABSTRACT:
A semiconductor device includes a substrate; a first insulating layer provided on the substrate; a conductive layer buried in the first insulating layer; a semiconductor pillar including a lower diffusion layer provided immediately above the conductive layer, the lower diffusion layer being electrically connected to the conductive layer, a semiconductor layer on the lower diffusion layer, and an upper diffusion layer on the semiconductor layer; a gate insulating film provided on a peripheral side surface of the semiconductor layer; a gate electrode provided on the gate insulating film; and a second insulating layer provided such that the gate electrode and a circumference of the semiconductor pillar are buried in the second insulating layer.

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