Method of fabricating an apparatus having a lanthanum-metal...

Details Method of fabricating an apparatus having a lanthanum-metal... Method of fabricating an apparatus having a lanthanum-metal...

2011-01-11

2011-01-11

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S783000, C257SE21209, C257SE21210, C257SE21274, C257SE21280

Reexamination Certificate

active

07867919

ABSTRACT:
Lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor.

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