Semiconductor contact barrier

Details Semiconductor contact barrier Semiconductor contact barrier

2011-03-01

2011-03-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000, C438S700000, C257SE21006, C257SE21051, C257SE21170, C257SE21320, C257SE21229, C257SE21304, C257SE21421, C257SE21545

Reexamination Certificate

active

07897514

ABSTRACT:
System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.

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