Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-01-25

2011-01-25

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE29342, C977S742000, C977S762000

Reexamination Certificate

active

07875920

ABSTRACT:
Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semiconductor device may include a lower electrode including a plurality of tubes or wires on a semiconductor substrate, a dielectric layer on the surface of the lower electrode, and an upper electrode on the surface of the dielectric layer, wherein the plurality of tubes or wires radiate outwardly from each other centering on the lower portion of the plurality of tubes or wires. Thus, the off current of the capacitor may be increased by increasing the surface area of the lower electrodes of the capacitor.

REFERENCES:
patent: 6628053 (2003-09-01), Den et al.
patent: 2003/0134436 (2003-07-01), Yates et al.
patent: 2003/0179559 (2003-09-01), Engelhardt et al.
patent: 2003/0211724 (2003-11-01), Hassa
patent: 2004/0058153 (2004-03-01), Ren et al.
patent: 2006/0157771 (2006-07-01), Choi et al.
patent: 2006/0169972 (2006-08-01), Furukawa et al.
patent: 2006/0244102 (2006-11-01), Hoshino
patent: 2006/0249726 (2006-11-01), Choi et al.
patent: 2007/0051970 (2007-03-01), Jang et al.
patent: 2007/0059584 (2007-03-01), Nakano et al.
patent: 2007/0242417 (2007-10-01), Mosley et al.
patent: 2008/0218939 (2008-09-01), Marcus et al.
patent: 2010/0075130 (2010-03-01), Meng et al.
patent: 1724785 (2006-11-01), None
patent: 2004-146520 (2004-05-01), None
patent: 10-2004-0069492 (2004-08-01), None
patent: 10-2005-0074703 (2005-07-01), None
patent: 10-2006-0000344 (2006-01-01), None
patent: 10-2006-0023064 (2006-03-01), None
Korean Office Action dated Mar. 12, 2008 in corresponding Korean Patent Application.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2723795