Method for modifying high-k dielectric thin film and...

Details Method for modifying high-k dielectric thin film and... Method for modifying high-k dielectric thin film and...

2011-01-11

2011-01-11

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S791000, C438S680000, C438S792000, C257SE21170, C257SE21054, C257SE21077, C257SE21134, C257SE21242, C257SE21259, C257SE21267, C257SE21311, C257SE21318, C257SE21319, C257SE21324

Reexamination Certificate

active

07867920

ABSTRACT:
There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

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Korean Office Action mail date Jun. 24, 2010.

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