Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-20
1998-09-01
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257774, H01L 2978, H01L 2944, H01L 2952, H01L 2992
Patent
active
058014101
ABSTRACT:
A ferroelectric capacitor includes a substrate and a capacitor electrode on the substrate. A ferroelectric layer is provided on the first capacitor electrode, and a first insulating layer on the ferroelectric layer has a first contact hole therein exposing a portion of the ferroelectric layer. A second capacitor electrode on the first insulating layer makes contact with the ferroelectric layer through the first contact hole. In addition, the second capacitor electrode includes an extension that extends across the first insulating layer away from the first contact hole. A second insulating layer on the second capacitor electrode opposite the substrate has a second contact hole therein exposing a portion of the second insulating capacitor electrode extension opposite the first insulating layer. A conductive line on the second insulating layer makes contact with the exposed portion of a second capacitor electrode extension opposite the insulating layer through the second contact hole.
REFERENCES:
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5369296 (1994-11-01), Kato
patent: 5371699 (1994-12-01), Larson
patent: 5432732 (1995-07-01), Ohmi
patent: 5495117 (1996-02-01), Larson
patent: 5536672 (1996-07-01), Miller et al.
Samsung Electronics Co,. Ltd.
Tang Alice W.
Whitehead Carl W.
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