Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-06-21

2011-06-21

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S110000, C257SE21517, C257SE21519

Reexamination Certificate

active

07964493

ABSTRACT:
A metal layer is formed on an upper surface of a resin layer provided to cover a plurality of semiconductor chips at a side on which an internal connecting terminal is disposed and the internal connecting terminal, and the metal layer is pressed to cause the metal layer in a corresponding portion to a wiring pattern to come in contact with the internal connecting terminal, and to then bond the metal layer in a portion provided in contact with the internal connecting terminal to the internal connecting terminal in a portion provided in contact with the metal layer.

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patent: 2003/0139004 (2003-07-01), Yoshida
patent: 2004/0115868 (2004-06-01), Ono
patent: 2004/0227218 (2004-11-01), Farnworth et al.
patent: 2005/0205641 (2005-09-01), Takeuchi et al.
patent: 10-335528 (1998-12-01), None
patent: 11-45905 (1999-02-01), None
patent: 11-87605 (1999-03-01), None
patent: 2002-33414 (2002-01-01), None
patent: 2002-110854 (2002-04-01), None

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