Structure, design structure and method of manufacturing dual...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S258000, C438S275000, C257SE21421, C257SE21623

Reexamination Certificate

active

08003463

ABSTRACT:
A structure, design structure and method of manufacturing is provided for a dual metal gate Vt roll-up structure, e.g., multi-work function metal gate. The method of manufacturing the multi-work function metal gate structure comprises forming a first type of metal with a first work function in a central region and forming a second type of metal with a second work function in at least one edge region adjacent the central region. The first work-function is different from the second work function.

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