Metal interconnection of a semiconductor device and method...

Details Metal interconnection of a semiconductor device and method... Metal interconnection of a semiconductor device and method...

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

07960273

ABSTRACT:
A method of manufacturing a metal interconnection of a semiconductor device includes forming a base layer with at least one groove, the at least one groove having an open upper portion, forming a first metal layer in the at least one groove, forming a seed metal layer on the first metal layer in the at least one groove, the seed metal layer being only on a bottom surface of the at least one groove, and forming a metal pattern grown from the seed metal layer to fill the at least one grove.

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