Methods of fabricating semiconductor devices with enlarged...

Details Methods of fabricating semiconductor devices with enlarged... Methods of fabricating semiconductor devices with enlarged...

2011-01-18

2011-01-18

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S305000, C438S595000, C257SE21177, C257SE21235, C257SE21429

Reexamination Certificate

active

07871914

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed.

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Notice to File a Response/Amendment to the Examination Report, Korean Application No. 10-2002-0081091, Nov. 22, 2004.

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