Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-21
2011-06-21
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S279000, C257S520000, C257SE21546
Reexamination Certificate
active
07964467
ABSTRACT:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed between a gate electrode and an outer portion of an active region of a FET. Also provided is a structure having a high-leakage dielectric formed between the gate electrode and the active region of the FET and a method of manufacturing such structure.
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Anderson Brent A.
Nowak Edward J.
International Business Machines - Corporation
Kotulak Richard
Roberts Mlotkowski Safran & Cole P.C.
Taylor Earl N
Vu David
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