Method of forming a gate stack structure

Details Method of forming a gate stack structure Method of forming a gate stack structure

2011-04-26

2011-04-26

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S277000, C257S365000, C257S366000, C257SE21637

Reexamination Certificate

active

07932152

ABSTRACT:
A method of forming an integrated circuit structure on a substrate, the substrate includes a primary region and a secondary region. A first layer of a first material of a first thickness is formed over the substrate. A portion of the first layer is removed over the primary region to expose the substrate. The structure is exposed to an oxidizing medium. This forms a second layer, for example, of an oxide material primary region of the substrate. The second layer has a second thickness. Additionally, at least a portion of said first layer is converted to a third layer, for example, of an oxynitride material. The third layer has a third thickness.

REFERENCES:
patent: 6147008 (2000-11-01), Chwa et al.
patent: 6355579 (2002-03-01), Ra
patent: 6511887 (2003-01-01), Yu et al.
patent: 6861375 (2005-03-01), Nakaoka et al.
patent: 7091074 (2006-08-01), Han et al.
patent: 2002/0009851 (2002-01-01), Shukuri et al.
patent: 2003/0008526 (2003-01-01), Gambino et al.
patent: 2004/0224531 (2004-11-01), You et al.
patent: 2005/0003597 (2005-01-01), Han et al.
patent: 2005/0253219 (2005-11-01), Matsumoto et al.
patent: 2006/0043511 (2006-03-01), Nomura et al.
patent: 2000174011 (2000-06-01), None
patent: 2006339370 (2006-12-01), None

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