Process for producing fine patterns using cyclocarbosilane

Details Process for producing fine patterns using cyclocarbosilane Process for producing fine patterns using cyclocarbosilane

1990-03-20

1992-03-03

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430313, 430323, 430330, 430317, 430967, 430270, G03F 730, G03F 738, G03C 500

Patent

active

050932241

ABSTRACT:
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,
a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

REFERENCES:
patent: 4464460 (1984-08-01), Hiraoka et al.
patent: 4481279 (1984-11-01), Naito et al.
patent: 4810601 (1989-03-01), Allen et al.
patent: 4863833 (1989-09-01), Fukuyama et al.
Patent Abstracts of Japan, vol. 11, No. 270 (P-611)(2717) Sep. 3, 1987, of JP-A-62 71945 (Toshiba Corp.) Apr. 2, 1987.

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