Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-16

2011-08-16

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S207000, C438S221000, C438S297000, C438S439000

Reexamination Certificate

active

07998806

ABSTRACT:
A method of manufacturing a semiconductor device includes forming an oxidation film over a first and a second device region, forming an first etching preventing film extending over a first and a second area, removing the first etching preventing film over the first area; removing the oxidation film over the first device region, forming a first gate insulating film over the first device region, removing the oxidation film over the second device region, forming a second gate insulating film over the second device region, forming a first gate electrode over the first gate insulating film, forming a second gate electrode over the second gate insulating film, forming first source and drain regions in the first device region at both sides of the first gate electrode, and forming second source and drain regions in the second device region at both sides of the second gate electrode.

REFERENCES:
patent: 5843835 (1998-12-01), Liu
patent: 6380020 (2002-04-01), Shimizu
patent: 7119412 (2006-10-01), Yamamoto
patent: 7419864 (2008-09-01), Ohkawa et al.
patent: 2005-129760 (2005-05-01), None
patent: 2005-142362 (2005-06-01), None
patent: 2006-19661 (2006-01-01), None
patent: 10-2005-0009617 (2005-01-01), None
Korean Office Action dated Jun. 11, 2010, issued in corresponding Korean Patent Application No. 1020080077453.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2714421