Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S324000
Reexamination Certificate
active
07867838
ABSTRACT:
To provide a highly reliable semiconductor device and a method for manufacturing the semiconductor device, where defects such as a short between a gate electrode layer and a semiconductor layer and a leakage current, which would otherwise be caused due to a coverage defect of the semiconductor layer with an insulating layer, can be prevented. In order to form a plurality of semiconductor elements over an insulating surface, a semiconductor layer is not separated into a plurality of island-shape semiconductor layers, but instead, element isolation regions, which electrically insulate a plurality of element regions functioning as semiconductor elements, are formed in one semiconductor layer, i.e., a first element isolation region with high resistance and a second element isolation region which has a contact with the element region and has a conductivity type opposite to that of the source and drain regions of the element region.
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Office Action (Application No. 200710102490.6) dated Dec. 18, 2009 with English translation.
Specification, Claims, Abstract, Drawings of U.S. Appl. No. 08/205,300 to Zhang et al.
Arai Yasuyuki
Kawamata Ikuko
Lee Calvin
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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