Semiconductor device manufacturing method and plasma...

Details Semiconductor device manufacturing method and plasma... Semiconductor device manufacturing method and plasma...

2011-03-15

2011-03-15

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S197000, C438S769000, C438S778000

Reexamination Certificate

active

07906440

ABSTRACT:
A semiconductor device manufacturing method includes forming a gate insulating film on a semiconductor substrate; forming, on the gate insulating film, a multilayered structure including at least a polysilicon layer and a metal layer containing a refractory metal; forming a gate electrode by etching the multilayered structure; and performing a plasma process by a plasma processing apparatus, which is configured to supply microwaves into a process chamber from a planar antenna including a plurality of slots and thereby to generate plasma, at a process pressure of 133.3 to 1,333 Pa and a process temperature of 250 to 800° C. by using a process gas containing at least hydrogen gas and oxygen gas, thereby selectively oxidizing the polysilicon layer in the gate electrode.

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