Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-30

2011-08-30

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S787000, C257SE21577

Reexamination Certificate

active

08008190

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

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Notification of Reason(s) for Refusal mailed Jul. 28, 2009, from the Japanese Patent Office in corresponding Japanese Patent Application No. 2007-163686, and English language translation thereof.

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