Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-03-29

2011-03-29

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C257S337000, C257S335000, C257SE29027, C257SE21618, C257SE21633

Reexamination Certificate

active

07915125

ABSTRACT:
A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate; introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region; forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively.

REFERENCES:
patent: 5719081 (1998-02-01), Racanelli et al.
patent: 5731611 (1998-03-01), Hshieh et al.
patent: 6218889 (2001-04-01), Fujiki et al.
patent: 2002/0020873 (2002-02-01), Klodzinski
patent: 11-163320 (1999-06-01), None
patent: 2006-13344 (2006-12-01), None

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