Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1998-08-03
2000-12-19
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438265, 438485, 438762, 438775, H01L 213205, H01L 214763
Patent
active
061627178
ABSTRACT:
A method of forming the gate structure of a MOS device forms a gate structure over a semiconductor substrate and then treats the sidewalls of the gate structure with nitrous oxide plasma so that the silicon and tungsten atoms within the gate structure can react with activated nitrogen in the plasma to form chemical bonds. Hence, a protective layer is formed on the gate sidewalls, thereby increasing thermal stability of the tungsten suicide layer and the polysilicon layer within the gate structure. Thereafter, an oxide material is formed over the protective layer using a rapid thermal oxidation. Next, spacers are formed over the sidewall oxide layer. Finally, subsequent operations necessary for forming a complete MOS device are performed.
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Davis Jamie L.
Jr. Carl Whitehead
Mosel Vitelic Inc.
ProMOS Technologies, Inc
Siemens AG
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