Method of manufacturing semiconductor device having oxide-nitrid

Details Method of manufacturing semiconductor device having oxide-nitrid Method of manufacturing semiconductor device having oxide-nitrid

1998-08-19

2000-12-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438216, 438591, H01L 21336

Patent

active

061626872

ABSTRACT:
Generally, the present invention relates to semiconductor devices having an oxide-nitride gate insulating layer and methods of manufacture thereof. Consistent with the present invention a semiconductor device is formed by forming a nitrogen bearing oxide layer over a substrate and forming a nitride layer over the nitrogen bearing oxide layer. The thickness of the nitride layer is reduced and the nitride layer is annealed in an NH.sub.3 bearing ambient. The NH.sub.3 anneal may, for example, be performed before or after or while reducing the thickness of the nitride layer. One or more of the gate electrodes may then be formed over the nitride layer using the nitrogen bearing oxide layer and the nitride layer to insulate the gate electrode(s) from the substrate. This technique can, for example, provide a highly reliable and scaled gate insulating layer.

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patent: 5712208 (1998-01-01), Tseng et al.
patent: 5880508 (1999-12-01), Wu

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