Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-04-26

2011-04-26

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21410

Reexamination Certificate

active

07932151

ABSTRACT:
A method of manufacturing a semiconductor device includes the following processes. A first gate trench is formed if a semiconductor substrate region. Then a first insulating film is formed to cover bottom and side surfaces of the first gate trench. Then, the first insulating film is removed to cover the bottom surface. Then, the semiconductor substrate region exposed to the first gate trench is etched by the first insulating film covering the side surfaces as a mask, to form, in the semiconductor substrate region, a second gate trench directly below the first gate trench. The second gate trench is defined by an unetched film portion of the semiconductor substrate region. The unetched film portion extends toward one of the side surfaces of the first gate trench.

REFERENCES:
patent: 2005/0285175 (2005-12-01), Cheng et al.
patent: 2009/0101971 (2009-04-01), Kujirai
patent: 2007-158269 (2007-06-01), None

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