Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-24
2011-05-24
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S656000, C438S664000, C438S683000, C438S685000, C438S913000
Reexamination Certificate
active
07947597
ABSTRACT:
Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.
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Basceri Cem
Drewes Joel A.
Sarigiannis Demetrius
Garcia Joannie A
Micro)n Technology, Inc.
Richards N Drew
Wells St. John P.S.
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