Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-07-21
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438294, H01L 218242
Patent
active
061626740
ABSTRACT:
A semiconductor device having a memory device and a logic device formed together on a single chip is provided. A first element region and a second element region of a semiconductor substrate are formed spaced apart from each other with an isolation region therebetween. A floating conductive film is provided on the isolation region.
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Bowers Charles
Mitsubishi Denki & Kabushiki Kaisha
Thompson Craig
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