Method of manufacturing SRAM cell

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438210, H01L 218244

Patent

active

061626732

ABSTRACT:
An SRAM cell capable of enhancing the cell ratio and method of manufacturing the same are disclosed. The SRAM cell has pull-up devices, pull-down devices and access devices that interconnected at cell nodes, including: current reduction part for reducing current of the access devices, wherein the current reduction part is connected with the access devices and the cell nodes.

REFERENCES:
patent: 4499652 (1985-02-01), Shrivastava
patent: 5047818 (1991-09-01), Tsukamoto
patent: 5264385 (1993-11-01), Rodder
patent: 5311464 (1994-05-01), Takase et al.
patent: 5324973 (1994-06-01), Sivan
patent: 5386379 (1995-01-01), Ali-Yahia et al.
patent: 5396098 (1995-03-01), Kim et al.
patent: 5396449 (1995-03-01), Atallah et al.
patent: 5406107 (1995-04-01), Yamaguchi
patent: 5515313 (1996-05-01), Yamaguchi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing SRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing SRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing SRAM cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-270591

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.