Method of manufacturing a semiconductor device having an LDD str

Details Method of manufacturing a semiconductor device having an LDD str Method of manufacturing a semiconductor device having an LDD str

1999-04-09

2000-12-19

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, 438589, 438621, H01L 218238, H01L 2976

Patent

active

061626694

ABSTRACT:
To obtain a semiconductor device which prevents an increase in the resistance of a source/drain region; which operates fast and stably; and which provides a high manufacturing yield, and to obtain a method of manufacturing the semiconductor device. A recess 8 is formed on a first low impurity-concentration region 5 with the exception of the area immediately below side wall insulating material 6y, and a layer damaged as a result of formation of the side wall insulating material 6y is removed. Further, a second low impurity-concentration region 10 is formed below the recess 8.

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