Method of manufacturing a semiconductor device having a lightly

Details Method of manufacturing a semiconductor device having a lightly Method of manufacturing a semiconductor device having a lightly

1999-03-03

2000-12-19

Meier, Stephen D.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438299, 438301, 438306, 438527, 438529, 438533, H01L 21336, H01L 218234

Patent

active

061626686

ABSTRACT:
A high withstand voltage semiconductor device includes a semiconductor substrate of a first conductivity type, a metallic wiring formed on a surface of the semiconductor substrate and having a contact face with said semiconductor substrate, a highly doped impurity region formed within the semiconductor substrate below the contact face and of a second conductivity type, a lightly doped impurity region formed around the highly doped impurity region and of the second conductivity type, and a MOSFET with a second conductivity-type having a source or drain region formed on the surface of the semiconductor substrate and electrically connected to the metallic wiring through the impurity regions.

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