Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-07-05

2011-07-05

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S487000, C438S166000, C257S627000, C257SE21134

Reexamination Certificate

active

07972943

ABSTRACT:
A cap film is formed over semiconductor films formed over an insulating substrate; the semiconductor films are irradiated with a laser beam which is capable of completely melting the semiconductor film in a film-thickness direction to completely melt the semiconductor film. By controlling the laser beam, a crystalline semiconductor films are formed over the substrate, in each of which orientations of crystal planes are controlled. In addition, an n-channel thin film transistor is formed using a crystalline region in which crystal planes are oriented along {001} and a p-channel thin film transistor is formed using a crystalline region in which crystal planes are oriented along {211} or {101}.

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