Transistors with laterally extended active regions and...

Details Transistors with laterally extended active regions and... Transistors with laterally extended active regions and...

2011-03-08

2011-03-08

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S272000, C257SE21428

Reexamination Certificate

active

07902597

ABSTRACT:
A transistor and method of fabricating the transistor are disclosed. The transistor is disposed in an active region of a substrate defined by an isolation region and includes a gate electrode and associated source/drain regions. The isolation region includes an upper isolation region and an lower isolation region, wherein the upper isolation region is formed with sidewalls having, at least in part, a positive profile.

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