Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-04-12

2011-04-12

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257S332000, C257S330000, C257SE29262, C257SE21410

Reexamination Certificate

active

07923333

ABSTRACT:
A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate electrode buried over the trench to form a buried gate pattern, etching portions of the substrate on both sides of the buried gate pattern to a certain depth, performing an ion implantation process on the substrate to form source/drain junctions, and forming metal patterns over the source/drain junctions.

REFERENCES:
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 7633109 (2009-12-01), Lee et al.
patent: 2006/0022264 (2006-02-01), Mathew et al.
patent: 2006/0134858 (2006-06-01), Yamazaki

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