Method of forming a bipolar transistor and semiconductor...

Details Method of forming a bipolar transistor and semiconductor... Method of forming a bipolar transistor and semiconductor...

2011-04-26

2011-04-26

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S312000, C438S366000, C257SE21372, C257SE21608

Reexamination Certificate

active

07932145

ABSTRACT:
A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

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Non-Final Office Action dated May 13, 2008 in U.S. Appl. No. 11/454,403.
Non-Final Office Action dated Dec. 11, 2008 in U.S. Appl. No. 11/454,403.

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