Inhibitors for selective deposition of silicon containing films

Details Inhibitors for selective deposition of silicon containing films Inhibitors for selective deposition of silicon containing films

2011-05-10

2011-05-10

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C216S058000, C216S037000, C216S079000

Reexamination Certificate

active

07939447

ABSTRACT:
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.

REFERENCES:
patent: 2761853 (1956-09-01), Uraneck et al.
patent: 2860173 (1958-11-01), Jones et al.
patent: 3377395 (1968-04-01), Christoph, Jr.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4161462 (1979-07-01), Bocharov et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4656021 (1987-04-01), Tanabe et al.
patent: 4747367 (1988-05-01), Posa
patent: 4761269 (1988-08-01), Conger et al.
patent: 5071670 (1991-12-01), Kelly
patent: 5112439 (1992-05-01), Reisman et al.
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5674781 (1997-10-01), Huang et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5769950 (1998-06-01), Takasu et al.
patent: 5831335 (1998-11-01), Miyamoto
patent: 5851589 (1998-12-01), Nakayama et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5933761 (1999-08-01), Lee
patent: 6013155 (2000-01-01), McMillin et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6037258 (2000-03-01), Liu et al.
patent: 6042654 (2000-03-01), Comita et al.
patent: 6048790 (2000-04-01), Lacoponi et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6077775 (2000-06-01), Stumborg et al.
patent: 6083818 (2000-07-01), Stumborg et al.
patent: 6093252 (2000-07-01), Wengert et al.
patent: 6093368 (2000-07-01), Chu et al.
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6146517 (2000-11-01), Hoinkis
patent: 6148761 (2000-11-01), Majewski et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6184128 (2001-02-01), Wang et al.
patent: 6188134 (2001-02-01), Stumborg et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6207567 (2001-03-01), Wang et al.
patent: 6225213 (2001-05-01), Urabe
patent: 6270572 (2001-08-01), Kim et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6291876 (2001-09-01), Stumborg et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6340619 (2002-01-01), Ko
patent: 6342448 (2002-01-01), Lin et al.
patent: 6351039 (2002-02-01), Jin et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6380065 (2002-04-01), Komai et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6444495 (2002-09-01), Leung et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6521048 (2003-02-01), Miller et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6562140 (2003-05-01), Bondestam et al.
patent: 6583015 (2003-06-01), Fitzgerald et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6593191 (2003-07-01), Fitzgerald
patent: 6716713 (2004-04-01), Todd
patent: 6727169 (2004-04-01), Raaijmakers et al.
patent: 6820570 (2004-11-01), Kilpela et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 6900115 (2005-05-01), Todd
patent: 6958253 (2005-10-01), Todd
patent: 6962859 (2005-11-01), Todd et al.
patent: 6969875 (2005-11-01), Fitzgerald
patent: 7020981 (2006-04-01), Shero et al.
patent: 7026219 (2006-04-01), Pomarede et al.
patent: 7030042 (2006-04-01), Vaartstra
patent: 7091522 (2006-08-01), Lee et al.
patent: 7132338 (2006-11-01), Samoilov et al.
patent: 7166528 (2007-01-01), Kim et al.
patent: 7186630 (2007-03-01), Todd
patent: 7195985 (2007-03-01), Murthy et al.
patent: 7208362 (2007-04-01), Chidambaram
patent: 7235492 (2007-06-01), Samoilov
patent: 7237460 (2007-07-01), Hu
patent: 7273526 (2007-09-01), Shinriki et al.
patent: 7282239 (2007-10-01), Sarigiannis et al.
patent: 7307273 (2007-12-01), Currie
patent: 7335545 (2008-02-01), Currie
patent: 7396415 (2008-07-01), Arena et al.
patent: 7413627 (2008-08-01), Li et al.
patent: 7438760 (2008-10-01), Bauer et al.
patent: 7537662 (2009-05-01), Soininen et al.
patent: 7560352 (2009-07-01), Carlson et al.
patent: 2001/0001742 (2001-05-01), Huang et al.
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2002/0023520 (2002-02-01), Hu
patent: 2002/0168868 (2002-11-01), Todd
patent: 2004/0043636 (2004-03-01), Vaartstra et al.
patent: 2004/0142558 (2004-07-01), Granneman
patent: 2004/0216668 (2004-11-01), Lindfors et al.
patent: 2004/0224089 (2004-11-01), Singh et al.
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2005/0079692 (2005-04-01), Samoilov et al.
patent: 2005/0092247 (2005-05-01), Schmidt et al.
patent: 2005/0250298 (2005-11-01), Bauer
patent: 2006/0011984 (2006-01-01), Currie
patent: 2006/0014366 (2006-01-01), Currie
patent: 2006/0115933 (2006-06-01), Ye et al.
patent: 2006/0166414 (2006-07-01), Carlson et al.
patent: 2006/0169668 (2006-08-01), Samoilov
patent: 2006/0169669 (2006-08-01), Zojaji et al.
patent: 2006/0205194 (2006-09-01), Bauer
patent: 2006/0216417 (2006-09-01), Todd et al.
patent: 2006/0234504 (2006-10-01), Bauer et al.
patent: 2006/0266289 (2006-11-01), Verghese et al.
patent: 2006/0289900 (2006-12-01), Thirupapuliyur et al.
patent: 2007/0015374 (2007-01-01), Granneman
patent: 2007/0259112 (2007-11-01), Ishikawa et al.
patent: 2008/0202416 (2008-08-01), Provencher et al.
patent: 2009/0111246 (2009-04-01), Bauer et al.
patent: 19820147 (1999-07-01), None
patent: 10026180 (2001-12-01), None
patent: 1024210 (2000-08-01), None
patent: WO 96/17107 (1996-06-01), None
patent: WO 99/41423 (1999-08-01), None
patent: WO 99/62109 (1999-12-01), None
patent: WO 00/11721 (2000-03-01), None
patent: WO 00/13207 (2000-03-01), None
patent: WO 00/15866 (2000-03-01), None
patent: WO 00/15881 (2000-03-01), None
patent: WO 00/16377 (2000-03-01), None
patent: WO 00/22659 (2000-04-01), None
patent: WO 00/55895 (2000-09-01), None
patent: WO 00/75964 (2000-12-01), None
patent: WO 00/79576 (2000-12-01), None
patent: WO 01/15220 (2001-03-01), None
patent: WO 01/36702 (2001-05-01), None
patent: WO 01/45149 (2001-06-01), None
patent: WO 01/66832 (2001-09-01), None
patent: WO 01/78123 (2001-10-01), None
patent: WO 01/78124 (2001-10-01), None
patent: WO 01/99166 (2001-12-01), None
patent: WO 2004/025716 (2004-03-01), None
Abeles et al.;Amorphous Semiconductor Superlattices; Physical Review Letters; Nov. 21, 1983; pp. 2003-2006; vol. 51; No. 21.
Antonell et al., “Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500-600° C”, J. Appl. Phys. 79 (10), pp. 7646-7651 (1996).
Aoyama, T., “Si Selective Epitaxial Growth Using C12 Pulsed Molecular Flow Method,” Thin Solid Films 321 (1998) 256-260, © 1998 Elsevier Science S.A.
Bauer et al., “Si3H8based epitaxy of biaxially stressed silicon films doped with carbon and arsenic for CMOS applications”, in Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA, 2005), E4.30.
Bauer et al., “Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth”, Thin Solid Films 364, pp. 228-232 (2000).
Bedair;Selective area and sidewall growth by atomic layer epitaxy; Semicond Sci. Technol; 1993; 1052-1062; vol. 8.
Düscö et al.;Deposition of Tin Oxide into Porous Silicon by Atomic Layer Epitaxy; J. Electrochem. Soc.; Feb. 1996; pp. 683-687; vol. 143, No. 2.
Eberl et al., “Structural properties of SiC and SiGeC alloy layers on Si”, Chapter 2.5 in “Properties of Silicon Germanium and SiGe:Carbon”, Institution of Electrical Engineers, pp. 75-77 (1999).
Fazan et al.;A High-

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