Magnetic memory devices using magnetic domain dragging

Details Magnetic memory devices using magnetic domain dragging Magnetic memory devices using magnetic domain dragging

2011-03-08

2011-03-08

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21665, C365S158000

Reexamination Certificate

active

07902579

ABSTRACT:
A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

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