Method of manufacturing a laterally diffused metal oxide...

Details Method of manufacturing a laterally diffused metal oxide... Method of manufacturing a laterally diffused metal oxide...

2011-04-19

2011-04-19

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C438S301000, C257SE21417

Reexamination Certificate

active

07927939

ABSTRACT:
A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, and an integrated circuit associated therewith. The method includes forming a lightly-doped source/drain region with a first dopant, the lightly-doped source/drain region located between first and second isolation structures. The method further includes creating a gate over the lightly-doped source/drain region. In one advantageous embodiment of the present invention, the method further includes diffusing a second dopant at least partially across the lightly-doped source/drain region and under the gate to form a first portion of a channel.

REFERENCES:
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4918026 (1990-04-01), Kosiak et al.
patent: 5841166 (1998-11-01), D'Anna et al.
patent: 6255154 (2001-07-01), Akaishi et al.

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