Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S268000, C438S427000
Reexamination Certificate
active
07867856
ABSTRACT:
A semiconductor device includes an element isolation region formed in a semiconductor substrate, an active region surrounded by the element isolation region, and a gate electrode formed in one direction to cross the active region. The semiconductor substrate includes two gate trenches formed in parallel to a major axis direction of the active region in the active region, and a fin-shaped part which is located between the two gate trenches. The gate electrode is buried in the two gate trenches and formed on the fin-shaped part. The fin-shaped part serves as a channel region. A fin field effect transistor in which a width of the channel region is smaller than a gate length is thereby obtained.
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Elpida Memory Inc.
Foley & Lardner LLP
Luu Chuong A.
LandOfFree
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